intrinsic semiconductor - translation to ιταλικό
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intrinsic semiconductor - translation to ιταλικό

PURE SEMICONDUCTOR WITHOUT ANY SIGNIFICANT DOPANT SPECIES PRESENT
I-type semiconductor; Undoped semiconductor

intrinsic semiconductor         
semiconduttore intrinseco, semiconduttore in cui la conduttività è determinata dalla temperatura; semiconduttore libero da impurità (fisica)
semi-conductor         
  • [[John Bardeen]], [[William Shockley]] and [[Walter Brattain]] developed the bipolar [[point-contact transistor]] in 1947.
MATERIAL THAT HAS ELECTRICAL CONDUCTIVITY INTERMEDIATE TO THAT OF A CONDUCTOR AND AN INSULATOR
Semiconductors; Semi-Conductors; Semi-conductor; Semiconductor physics; Semiconducting material; List of semiconductor devices; Semiconductor material; Semiconducting; Semi conductor; Semiconductive; Electronic Materials; Semiconduction; Semicon; Electronic materials; Semi-conducting; Semiconductivity; Semi conductors; Physics of semiconductors; Electronic substance
semiconduttore (sostanza dalla resistività intermedia tra quella dei metalli e quella degli isolanti)
Complementary Metal Oxide Semiconductor         
TECHNOLOGY FOR CONSTRUCTING INTEGRATED CIRCUITS
Complementary Metal Oxide Semiconductor; Complimentary Metal Oxide Semiconductor; Complementary metal-oxide-semiconductor; Complementary metal-oxide semiconductor; CMOS based; Cmos; CMOS transistor; COS/MOS; Complementary metal–oxide–semiconductor; Complementary metal–oxide semiconductor; Complementary symmetry metal oxide semiconductor; Complementary-symmetry circuit; Complementary metal oxide semiconductor; Complementary-symmetry; CMOS logic; C-MOS; Complementary MOS; Complementary Symmetry Metal-Oxide Semiconductor; Complementary Metal–Oxide–Semiconductor; Complementary Metal-Oxide-Semiconductor
CMOS (semiconduttore in ossido di metallo complementare, chip di memoria su cui è registrata la formula configurativa del computer)

Ορισμός

semiconductor
<electronics> A material, typically crystaline, which allows current to flow under certain circumstances. Common semiconductors are silicon, germanium, gallium arsenide. Semiconductors are used to make diodes, transistors and other basic "solid state" electronic components. As crystals of these materials are grown, they are "doped" with traces of other elements called donors or acceptors to make regions which are n- or p-type respectively for the electron model or p- or n-type under the hole model. Where n and p type regions adjoin, a junction is formed which will pass current in one direction (from p to n) but not the other, giving a diode. One model of semiconductor behaviour describes the doping elements as having either free electrons or holes dangling at the points in the crystal lattice where the doping elements replace one of the atoms of the foundation material. When external electrons are applied to n-type material (which already has free electrons present) the repulsive force of like charges causes the free electrons to migrate toward the junction, where they are attracted to the holes in the p-type material. Thus the junction conducts current. In contrast, when external electrons are applied to p-type material, the attraction of unlike charges causes the holes to migrate away from the junction and toward the source of external electrons. The junction thus becomes "depleted" of its charge carriers and is non-conducting. (1995-10-04)

Βικιπαίδεια

Intrinsic semiconductor

An intrinsic (pure) semiconductor, also called an undoped semiconductor or i-type semiconductor, is a pure semiconductor without any significant dopant species present. The number of charge carriers is therefore determined by the properties of the material itself instead of the amount of impurities. In intrinsic semiconductors the number of excited electrons and the number of holes are equal: n = p. This may be the case even after doping the semiconductor, though only if it is doped with both donors and acceptors equally. In this case, n = p still holds, and the semiconductor remains intrinsic, though doped. This mean that some conductors are both intrinsic as well as extrinsic but only if n (electron donor dopant/excited electrons) is equal to p (electron acceptor dopant/vacant holes that act as positive charges).

The electrical conductivity of chemically pure semiconductors can still be affected by crystallographic defects of technological origin (like vacancies), some of which can behave similar to dopants. Their effect can often be neglected, though, and the number of electrons in the conduction band is then exactly equal to the number of holes in the valence band. The conduction of current of intrinsic semiconductor is enabled purely by electron excitation across the band-gap, which is usually small at room temperature except for narrow-bandgap semiconductors, like Hg
0.8
Cd
0.2
Te
.

The conductivity of a semiconductor can be modeled in terms of the band theory of solids. The band model of a semiconductor suggests that at ordinary temperatures there is a finite possibility that electrons can reach the conduction band and contribute to electrical conduction. A silicon crystal is different from an insulator because at any temperature above absolute zero, there is a non-zero probability that an electron in the lattice will be knocked loose from its position, leaving behind an electron deficiency called a "hole". If a voltage is applied, then both the electron and the hole can contribute to a small current flow.